Characterization of Ferroelectric Random Access Memory (FRAM) Storage Capacitors

Spatial variations in local switching parameters of ferroelectric random access memory capacitors

Transparent Ferroelectric Capacitors on Glass

We deposited transparent ferroelectric lead zirconate titanate thin films on fused silica and contacted them via Al-doped zinc oxide (AZO) transparent electrodes with an interdigitated electrode (IDE) design. These layers, together with a TiO2 buffer layer on the fused silica substrate, are highly transparent (>60% in the visible optical range). Fully crystallized Pb(Zr0.52Ti0.48)O3 (PZT) films...

Polarization fatigue of organic ferroelectric capacitors

The polarization of the ferroelectric polymer P(VDF-TrFE) decreases upon prolonged cycling. Understanding of this fatigue behavior is of great technological importance for the implementation of P(VDF-TrFE) in random-access memories. However, the origin of fatigue is still ambiguous. Here we investigate fatigue in thin-film capacitors by systematically varying the frequency and amplitude of the ...

Holographic Random Access Memory

We examine the primary challenges for building a practical and competitive holographic random access memory (HRAM) system, specifically for size, speed, and cost. We show that a fast HRAM system can be implemented with a compact architecture by incorporating conjugate readout, a pixel-matched sensor array, and a linear array of laser diodes. It provides faster random access time than hard disk ...

Energy Efficient Novel Design of Static Random Access Memory Memory Cell in Quantum-dot Cellular Automata Approach

This paper introduces a peculiar approach of designing Static Random Access Memory (SRAM) memory cell in Quantum-dot Cellular Automata (QCA) technique. The proposed design consists of one 3-input MG, one 5-input MG in addition to a (2×1) Multiplexer block utilizing the loop-based approach. The simulation results reveals the excellence of the proposed design. The proposed SRAM cell achieves 16% ...